IRGB4062DPBF transistor equivalent, insulated gate bipolar transistor.
C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
G
<.
* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged trans.
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