IRGB4062DPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* C

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 μS short circuit SOA

* Square RBSOA G

* 100% of the parts tested for ILM

* Positive VCE (ON) Temperature co-efficient

* Ult

IRGB4062DPBF

International Rectifier

430.21 KB

Insulated gate bipolar transistor.

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