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IRGB4064DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGB4064DPbF

Datasheet Details

Part number	IRGB4064DPbF
Manufacturer	International Rectifier
File Size	371.39 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4064DPbF Datasheet
Additional preview pages of the IRGB4064DPbF datasheet.

Product details

Features

Low VCE (on) Trench IGBT Technology.
Low Switching Losses.
Maximum Junction temperature 175 °C.
5µs SCSOA.
Square RBSOA.
100% of The Parts Tested for ILM.
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode.
Tighter Distribution of Parameters.
Lead-Free Package Benefits.
High Efficiency in a Wide Range of.

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Published: Mar 8, 2016 |