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IRGB4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGB4062DPBF

Datasheet Details

Part number	IRGB4062DPBF
Manufacturer	International Rectifier
File Size	430.21 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4062DPBF Datasheet
Additional preview pages of the IRGB4062DPBF datasheet.

Product details

Features

C.
Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA G.
100% of the parts tested for ILM .
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode E n-channel.
Tight parameter distribution.
Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65.

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Published: Nov 22, 2006 |