IRGB4607DPbF Features
* Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent
IRGB4607DPbF, IRGS4607DPBF Datasheet
Datasheet Details
IRGB4607DPbF, IRGS4607DPBF
International Rectifier
821.57 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGB4607DPbF, IRGS4607DPBF.
Please refer to the document for exact specifications by model.
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IRGB4607DPbF Distributor
