* Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent
IRGB4607DPbF Datasheet (821.57 KB)
IRGB4607DPbF
International Rectifier
821.57 KB
Insulated gate bipolar transistor.
VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate.
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