IRGB4607DPbF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

Download the IRGB4607DPbF datasheet PDF. This datasheet also includes the IRGS4607DPBF variant, as both parts are published together in a single manufacturer document.

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IRGB4607DPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGS4607DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGB4607DPbF
Manufacturer	International Rectifier (now Infineon)
File Size	821.57 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGB4607DPbF Datasheet

Overview

VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.75V @ IC = 4.

Key Features

Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter  Benefits High Efficiency in a Wide Range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGB4610DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4615DPBF	Power MOSFET
IRGB4620DPBF	Power MOSFET
IRGB4630DPbF	Insulated Gate Bipolar Transistor
IRGB4045DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4055PBF	PDP TRENCH IGBT
IRGB4056DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4059DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4060DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4061DPbF	IGBT