* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C G E n-channel G CE IRG
IRGB4715DPbF Datasheet (642.58 KB)
IRGB4715DPbF
International Rectifier
642.58 KB
Insulated gate bipolar transistor.
VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 8A Applications Industrial Motor Drive U.
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