IRGB4715DPbF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

Download the IRGB4715DPbF datasheet PDF. This datasheet also includes the IRGS4715DPBF variant, as both parts are published together in a single manufacturer document.

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IRGB4715DPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGS4715DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGB4715DPbF
Manufacturer	International Rectifier (now Infineon)
File Size	642.58 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGB4715DPbF Datasheet

Overview

VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.

Key Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C G E n-channel G CE IRGS4715DPbF D2‐Pak E C G IRGB4715DPbF TO‐220AB G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGB4045DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4055PBF	PDP TRENCH IGBT
IRGB4056DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4059DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4060DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4061DPbF	IGBT
IRGB4062DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4064DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4065PBF	IGBT
IRGB4086PbF	PDP Trench IGBT