Part number:
IRGB4B60KPBF
Manufacturer:
International Rectifier
File Size:
387.58 KB
Description:
Insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES
IRGB4B60KPBF Datasheet (387.58 KB)
IRGB4B60KPBF
International Rectifier
387.58 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGB4B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4055PBF PDP TRENCH IGBT (International Rectifier)
IRGB4056DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4060DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4061DPbF IGBT (International Rectifier)
IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB4065PBF IGBT (International Rectifier)