IRGBC30F - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Datasheet Details

Part number	IRGBC30F
Manufacturer	International Rectifier
File Size	180.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC30F Datasheet
Additional preview pages of the IRGBC30F datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.1V @VGE = 15V, I C = 17A n-channel.

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Published: Jun 5, 2007 |