Datasheet Details
| Part number | IRGBC30FD2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 297.75 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Download | IRGBC30FD2 Download (PDF) |
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| Part number | IRGBC30FD2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 297.75 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Download | IRGBC30FD2 Download (PDF) |
|
|
|
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.
They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
www.DataSheet4U.com TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.
| Part Number | Description |
|---|---|
| IRGBC30F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30K-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30KD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30M-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30MD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30MD2-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30U | INSULATED GATE BIPOLAR TRANSISTOR |