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IRGBC30S Datasheet, International Rectifier

IRGBC30S transistor equivalent, insulated gate bipolar transistor.

IRGBC30S Avg. rating / M : 1.0 rating-12

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IRGBC30S Datasheet

Features and benefits


* Switching-loss rating includes all "tail" losses
* Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency Curve G E C Standar.

Application

www.DataSheet4U.com TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EAR.

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide.

Image gallery

IRGBC30S Page 1 IRGBC30S Page 2 IRGBC30S Page 3

TAGS

IRGBC30S
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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