IRGIH50F - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Datasheet Details

Part number	IRGIH50F
Manufacturer	International Rectifier
File Size	565.05 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIH50F Datasheet
Additional preview pages of the IRGIH50F datasheet.

Product details

Description

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.They provide substantial benefits to a host of high-voltage, high-current applications.The performance of various IGBTs varies greatly with frequency.Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequen

Features

Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) max =2.9V @VGE = 15V, IC = 25A.

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Published: Jun 9, 2007 |