IRGI4061DPBF Description
PD - 97114 IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGI4061DPBF Key Features
- Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positiv
IRGI4061DPBF Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation