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IRGI4061DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGI4061DPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGI4061DPBF

Datasheet Details

Part number	IRGI4061DPBF
Manufacturer	International Rectifier
File Size	311.12 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGI4061DPBF Datasheet
Additional preview pages of the IRGI4061DPBF datasheet.

Product details

Features

Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 11A, TC = 100°C tsc > 5µs, Tjmax = 150°C n-channel C VCE(on) typ. = 1.35V Benefits.
High Efficiency in a Wide Range of Applica.

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Published: Nov 9, 2010 |