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IRGI4055PBF - PDP TRENCH IGBT

General Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Key Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

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Full PDF Text Transcription for IRGI4055PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGI4055PBF. For precise diagrams, and layout, please refer to the original PDF.

PD - 97186 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energ...

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ergy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGI4055PbF Key Parameters 300 1.10 220 150 V V A °C VCE min VCE(ON) typ. @ 36A IRP max @ TC= 25°C c TJ max C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

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