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IRGIB10B60KD1

Manufacturer: International Rectifier (now Infineon)

IRGIB10B60KD1 datasheet by International Rectifier (now Infineon).

IRGIB10B60KD1 datasheet preview

IRGIB10B60KD1 Datasheet Details

Part number	IRGIB10B60KD1
Datasheet	IRGIB10B60KD1_InternationalRectifier.pdf
File Size	412.53 KB
Manufacturer	International Rectifier (now Infineon)
Description	INSULATED GATE BIPOLAR TRANSISTOR

IRGIB10B60KD1 Overview

PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IRGIB10B60KD1 Key Features

Low VCE (on) Non Punch Through IGBT Technology
Low Diode VF
10µs Short Circuit Capability
Square RBSOA
Ultrasoft Diode Reverse Recovery Characteristics
Positive VCE (on) Temperature Coefficient
Maximum Junction Temperature Rated at 175°C
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI

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