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IRGIB15B60KD1P

Manufacturer: International Rectifier (now Infineon)

IRGIB15B60KD1P datasheet by International Rectifier (now Infineon).

IRGIB15B60KD1P datasheet preview

IRGIB15B60KD1P Datasheet Details

Part number	IRGIB15B60KD1P
Datasheet	IRGIB15B60KD1P-InternationalRectifier.pdf
File Size	375.78 KB
Manufacturer	International Rectifier (now Infineon)
Description	INSULATED GATE BIPOLAR TRANSISTOR

IRGIB15B60KD1P Overview

PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IRGIB15B60KD1P Key Features

Low VCE (on) Non Punch Through IGBT Technology
Low Diode VF
10µs Short Circuit Capability
Square RBSOA
Ultrasoft Diode Reverse Recovery Characteristics
Positive VCE (on) Temperature Coefficient
Maximum Junction Temperature Rated at 175°C
Lead-Free
Benchmark Efficiency for Motor Control
Rugged Transient Performance

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