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IRGIB15B60KD1P - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Maximum Junction Temperature Rated at 175°C.
  • Lead-Free Benefits.
  • Benchmark Efficiency for Motor Control. G E n-channel.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sh.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control. G E n-channel • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.