IRGIB15B60KD1P
IRGIB15B60KD1P is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
PD- 94914
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Maximum Junction Temperature Rated at 175°C
- Lead-Free
Benefits
- Benchmark Efficiency for Motor Control.
E n-channel
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. =...
