• Part: IRGIB6B60KD
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: International Rectifier
  • Size: 299.48 KB
Download IRGIB6B60KD Datasheet PDF
International Rectifier
IRGIB6B60KD
IRGIB6B60KD is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
PD-94427D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10µs Short Circuit Capability. - Square RBSOA. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 6.0A, TC=90°C tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits - Benchmark Efficiency for Motor Control. - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel...