IRGIB6B60KDPBF
IRGIB6B60KDPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
PD-95321
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Lead-Free.
VCES = 600V IC = 6.0A, TC=90°C
G E tsc > 10µs, TJ=175°C n-channel
VCE(on) typ. = 1.8V
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel...
