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IRGIB6B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free. C VCES = 600V IC = 6.0A, TC=90°C G E tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free. C VCES = 600V IC = 6.0A, TC=90°C G E tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings www.DataSheet4U.com TO-220 Full-Pak Max. 600 11 7.0 22 22 9.0 6.0 18 2500 ±20 38 19 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.