IRGIB10B60KD1P Description
IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGIB10B60KD1P Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10μs Short Circuit Capability
- Square RBSOA
- Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Maximum Junction Temperature Rated at 175°C
- Lead-Free
- UL Certified
- Benchmark Efficiency for Motor Control