IRGIB10B60KD1P
IRGIB10B60KD1P is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10μs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Maximum Junction Temperature Rated at 175°C
- Lead-Free
- UL Certified
G E n-channel
VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
TO-220 Full-Pak
Base part number IRGIB10B60KD1P
Package Type TO-220AB Full-...
