Datasheet4U Logo Datasheet4U.com

IRGIB10B60KD1P - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10μs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Maximum Junction Temperature Rated at 175°C.
  • Lead-Free.
  • UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits.
  • Benchmark Efficiency for Motor C.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRGIB4620DPbF IGBT Infineon
IRGIB4630DPbF IGBT Infineon
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGIB10B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR
IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR
IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR
IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR
IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free • UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.