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IRGIB10B60KD1P

Manufacturer: International Rectifier (now Infineon)

IRGIB10B60KD1P datasheet by International Rectifier (now Infineon).

IRGIB10B60KD1P datasheet preview

IRGIB10B60KD1P Datasheet Details

Part number	IRGIB10B60KD1P
Datasheet	IRGIB10B60KD1P-InternationalRectifier.pdf
File Size	394.00 KB
Manufacturer	International Rectifier (now Infineon)
Description	INSULATED GATE BIPOLAR TRANSISTOR

IRGIB10B60KD1P Overview

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IRGIB10B60KD1P Key Features

Low VCE (on) Non Punch Through IGBT Technology
Low Diode VF
10μs Short Circuit Capability
Square RBSOA
Ultrasoft Diode Reverse Recovery Characteristics
Positive VCE (on) Temperature Coefficient
Maximum Junction Temperature Rated at 175°C
Lead-Free
UL Certified
Benchmark Efficiency for Motor Control

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