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IRGIB10B60KD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGIB10B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGIB10B60KD1PBF

Datasheet Details

Part number	IRGIB10B60KD1PBF
Manufacturer	International Rectifier
File Size	511.05 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB10B60KD1PBF Datasheet
Additional preview pages of the IRGIB10B60KD1PBF datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C.
Lead-Free C VCES = 600V IC = 10A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.7V Benefits.
Benchmark Efficiency for Motor Control.
Rug.

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Published: Oct 28, 2011 |