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IRGIB10B60KD1PBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: .DataSheet.co.kr PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRGIB10B60KD1PBF datasheet preview

Datasheet Details

Part number	IRGIB10B60KD1PBF
Manufacturer	International Rectifier (now Infineon)
File Size	511.05 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB10B60KD1PBF_InternationalRectifier.pdf

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C.
Lead-Free C VCES = 600V IC = 10A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.7V Benefits.
Benchmark Efficiency for Motor Control.
Rug.

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