IRGIB10B60KD1PBF Description
.DataSheet.co.kr PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGIB10B60KD1PBF Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10µs Short Circuit Capability
- Square RBSOA
- Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Maximum Junction Temperature Rated at 175°C
- Lead-Free
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance