IRGMC30U Datasheet | International Rectifier

.. PD -90715B INSULATED GATE BIPOLAR TRANSISTOR Features - - - - - Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses Ultra Fast Speed IGBT VCES = 600V VCE(on) max = 3.0V @VGE = 15V, IC = 8.0A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The...