Datasheet Details
| Part number | IRGMC50F |
|---|---|
| Manufacturer | International Rectifier |
| File Size | 574.07 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 IRGMC50F Datasheet
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| Part number | IRGMC50F |
|---|---|
| Manufacturer | International Rectifier |
| File Size | 574.07 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
IRGMC50F Datasheet
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n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.They provide substantial benefits to a host of high-voltage, high-current applications.The performance of various IGBTs varies greatly with frequency.Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequen
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