IRGMC30F Overview
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency.
IRGMC30F Key Features
- Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz
- 8 kHz High operating frequency Switching-loss rating includes all "tail" losses