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PD -90715B
IRGMC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses
C
Ultra Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 3.0V
@VGE = 15V, IC = 8.0A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency.
IRGMC30U Datasheet
