IRGP4086PBF igbt equivalent, pdp trench igbt.
Key Parameters
l Advanced Trench IGBT Technology
VCE min
300
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 70A
1.90
V
Circuits in PDP Applic.
l Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
IRP max @ TC= 25°C c TJ max
250 150
A °C
.
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are.
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