Datasheet Summary
PDP TRENCH IGBT
- 97132
Features
Key Parameters l Advanced Trench IGBT Technology
VCE min
V l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 70A
Circuits in PDP Applications l Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency
IRP max @ TC= 25°C c TJ max
250 150
A °C l High Repetitive Peak Current Capability l Lead Free Package
E n-channel
TO-247AC
G G a te
C C o lle c to r
E Em itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area...