Datasheet Summary
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- 9.1114
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Short circuit rated -10µs @125°C, VGE = 15V
- Switching-loss rating includes all "tail" losses
- HEXFREDTM soft ultrafast diodes
- Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
Short Circuit Rated UltraFast CoPack IGBT
VCES = 600V VCE(sat) ≤ 3.2V
@VGE = 15V, IC = 25A
E n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host...