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IRGPS40B120UP - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Super-247 Package.
  • Lead-Free C VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, n-channel Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Significantly Less Snubber Required.
  • Excellent Current Sharing in Parallel Operation.

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www.DataSheet4U.net PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free C VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.