IRGS6B60K transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
C
IRGB6B6.
nsions are shown in millimeters (inches)
D2Pa.
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