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IRGS6B60K - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGS6B60K datasheet PDF. This datasheet also covers the IRGB6B60K variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB6B60K_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGS6B60KDPBF Insulated Gate Bipolar Transistor
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IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.