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IRGS6B60KD, IRGB6B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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IRGS6B60KD Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGS6B60KD, IRGB6B60KDPBF. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	IRGS6B60KD, IRGB6B60KDPBF
Manufacturer	International Rectifier ↗
File Size	349.15 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60KDPBF_InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRGS6B60KD, IRGB6B60KDPBF. Please refer to the document for exact specifications by model.

IRGS6B60KD Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
TO-220 is available in PbF as a Lead-Free G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
E.

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Published: Aug 17, 2007 |