IRGSL10B60KD - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Download the IRGSL10B60KD datasheet PDF. This datasheet also includes the IRGB10B60KD variant, as both parts are published together in a single manufacturer document.

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IRGSL10B60KD insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGB10B60KD_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGSL10B60KD
Manufacturer	International Rectifier (now Infineon)
File Size	327.20 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGSL10B60KD Datasheet

Overview

PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A,.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO.

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