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IRGSL14C40L - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGSL14C40L datasheet PDF. This datasheet also includes the IRGB14C40L variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB14C40L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel.

Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.

Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage Maximum Power Dissipation mA tPK = 1ms, f = 100Hz V W W °C °C KV C = 100pF, R = 1.5K ohm A L = 4.7mH, T = 25°C PD @ T = 110°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Voltage Self-clamped Inductive Switching Current Thermal Resistance Parameter Min Typ Max 1.2 40 °C/W Unit RθJC RθJA ZθJC www.irf.com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mounted, Steady State) Transient Thermal Impedance, Juction-to-Case (Fig.11) Page 1 4/7/2000

Overview

PD - 93891A Ignition IGBT.

Key Features

  • •Most Rugged in Industry •Logic-Level Gate Drive •> 6KV ESD Gate Protection •Low Saturation Voltage •High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition.