* Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ
IRGSL15B60KD Datasheet (373.45 KB)
IRGSL15B60KD
International Rectifier
373.45 KB
Insulated gate bipolar transistor.
PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100.
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