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IRGSL30B60K Datasheet, International Rectifier

IRGSL30B60K transistor equivalent, insulated gate bipolar transistor.

IRGSL30B60K Avg. rating / M : 1.0 rating-111

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IRGSL30B60K Datasheet

Features and benefits


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* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maxi.

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IRGSL30B60K Page 1 IRGSL30B60K Page 2 IRGSL30B60K Page 3

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