IRGSL6B60K Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits

* Benchmark E

IRGSL6B60K

International Rectifier

285.73 KB

Insulated gate bipolar transistor.

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