Download IRGSL6B60K Datasheet PDF
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IRGSL6B60K Description

PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR.

IRGSL6B60K Key Features

  • Low VCE (on) Non Punch Through IGBT Technology
  • 10µs Short Circuit Capability
  • Square RBSOA
  • Positive VCE (on) Temperature Coefficient
  • Benchmark Efficiency for Motor Control
  • Rugged Transient Performance
  • Low EMI
  • Excellent Current Sharing in Parallel Operation