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IRGSL6B60KD - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGSL6B60KD, a member of the IRGB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • TO-220 is available in PbF as a Lead-Free G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • E.

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www.DataSheet4U.com PD - 95229 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
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