IRGSL6B60K
IRGSL6B60K is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- Part of the IRGB6B60K comparator family.
- Part of the IRGB6B60K comparator family.
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Positive VCE (on) Temperature Coefficient.
IRGB6B60K IRGS6B60K IRGSL6B60K
VCES = 600V IC = 7.0A, TC=100°C
G E tsc > 10µs, TJ=150°C
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation. n-channel
VCE(on) typ. = 1.8V
TO-220AB IRGB6B60K
D2Pak IRGS6B60K
TO-262 IRGSL6B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
600 13 7.0 26 26 ± 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Wt Junction-to-Case
- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state)- Weight
Min.
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- Typ.
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