IRGSL6B60KDPbF Datasheet | International Rectifier

Features - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10μs Short Circuit Capability. - Square RBSOA. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. - Lead-Free E n-channel IRGB6B60KDPb F IRGS6B60KDPb F IRGSL6B60KDPb F VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits - Benchmark Efficiency for Motor Control. - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current- Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Thermal Resistance TO-220AB D2Pak TO-262 IRGB6B60KDPb F IRGS6B60KDPb F IRGSL6B60KDPb F Max. 600 18 10 26 26 18 10 26 ± 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V V W °C RθJC RθJC RθCS RθJA RθJA Wt .irf. Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state)‚ Weight Min. -...