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IRGSL6B60KDPbF - Insulated Gate Bipolar Transistor

Download the IRGSL6B60KDPbF datasheet PDF. This datasheet also covers the IRGS6B60KDPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10μs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Pe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGS6B60KDPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.