* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* TO-220 is available in PbF as
IRGSL6B60KD Datasheet (349.15 KB)
IRGSL6B60KD
International Rectifier
349.15 KB
Insulated gate bipolar transistor.
www.DataSheet4U.com PD - 95229 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD VCES = 6.
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