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IRGSL6B60KDPbF Datasheet, International Rectifier

IRGSL6B60KDPbF transistor equivalent, insulated gate bipolar transistor.

IRGSL6B60KDPbF Avg. rating / M : 1.0 rating-14

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IRGSL6B60KDPbF Datasheet

Features and benefits


* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .

Application

C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC DUT 360V diode clamp / DUT - 5V Rg L DUT.

Image gallery

IRGSL6B60KDPbF Page 1 IRGSL6B60KDPbF Page 2 IRGSL6B60KDPbF Page 3

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