IRGSL6B60KDPbF Datasheet - International Rectifier

Insulated Gate Bipolar Transistor

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10μs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free G E n-channel IRGB

IRGSL6B60KDPbF

International Rectifier

310.35 KB

Insulated gate bipolar transistor.

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