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IRGVH50F Datasheet, International Rectifier

IRGVH50F Datasheet, International Rectifier

IRGVH50F

datasheet Download (Size : 561.39KB)

IRGVH50F Datasheet

IRGVH50F transistor equivalent, insulated gate bipolar transistor.

IRGVH50F

datasheet Download (Size : 561.39KB)

IRGVH50F Datasheet
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Features and benefits


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* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating .

Application

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed ben.

Description

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. .

Image gallery

IRGVH50F Page 1 IRGVH50F Page 2 IRGVH50F Page 3

TAGS

IRGVH50F
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

Manufacturer


International Rectifier

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