IRGVH50F Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGVH50F Features

* Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) m

IRGVH50F General Description

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of hig.

IRGVH50F Datasheet (561.39 KB)

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IRGVH50F

Manufacturer:

International Rectifier

File Size:

561.39 KB

Description:

Insulated gate bipolar transistor.

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IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGVH50F Features

IRGVH50F General Description

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