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IRHE93130 - (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Download the IRHE93130 datasheet PDF. This datasheet also covers the IRHE9130 variant, as both devices belong to the same (irhe9130 / irhe93130) radiation hardened power mosfet surface mount family and are provided as variant models within a single manufacturer datasheet.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHE9130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 90881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9130 100K Rads (Si) IRHE93130 300K Rads (Si) RDS(on) 0.30 Ω 0.30 Ω ID -6.5A -6.5A IRHE9130 100V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7389U JANSF2N7389U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to www.DataSheet4U.
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