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International Rectifier Electronic Components Datasheet

IRHF57034 Datasheet

(IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE

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PD - 93791D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on)
IRHF57034 100K Rads (Si) 0.048
IRHF53034 300K Rads (Si) 0.048
IRHF54034 500K Rads (Si) 0.048
IRHF58034 1000K Rads (Si) 0.060
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
REF: MIL-PRF-19500/701
5 TECHNOLOGY
™
ID QPL Part Number
12A* JANSR2N7492T2
12A* JANSF2N7492T2
12A* JANSG2N7492T2
12A* JANSH2N7492T2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
12*
9.5 A
48
25 W
0.2 W/°C
±20 V
270 mJ
12 A
2.5 mJ
9.6 V/ns
-55 to 150
oC
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/27/06


International Rectifier Electronic Components Datasheet

IRHF57034 Datasheet

(IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE

No Preview Available !

IRHF57034, JANSR2N7492T2
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60 — —
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.062 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.048
VGS = 12V, ID = 9.5A Ã
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
2.0 — 4.0 V
12 — — S ( )
— — 10 µA
— — 25
VDS = VGS, ID = 1.0mA
VDS >= 15V, IDS = 9.5A Ã
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
— — 100 nA
— — -100
— — 40
VGS = 20V
VGS = -20V
VGS =12V, ID = 12A
— — 10 nC
VDS = 30V
— — 15
— — 25
— — 100 ns
— — 35
VDD = 30V, ID = 12A
VGS =12V, RG = 7.5
— — 30
— 7.0 — nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1160 —
— 530 —
— 18 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 12*
ISM Pulse Source Current (Body Diode) À
— — 48
A
VSD Diode Forward Voltage
— — 1.5 V
trr Reverse Recovery Time
— — 100 ns
QRR Reverse Recovery Charge
— — 300 nC
Tj = 25°C, IS = 12A, VGS = 0V Ã
Tj = 25°C, IF = 12A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 5.0
°C/W
— — 175
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2 www.irf.com


Part Number IRHF57034
Description (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
Maker International Rectifier
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