IRHLF73110 - (IRHLF77110 / IRHLF73110) POWER MOSFET
International Rectifier (now Infineon)
Download the IRHLF73110 datasheet PDF.
This datasheet also covers the IRHLF77110 variant, as both devices belong to the same (irhlf77110 / irhlf73110) power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
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5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche En.
Note: The manufacturer provides a single datasheet file (IRHLF77110_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHLF73110 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHLF73110. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD-97062 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) IRHLF77110 100K Rads (Si) 0...
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ummary Part Number Radiation Level RDS(on) IRHLF77110 100K Rads (Si) 0.30Ω IRHLF73110 300K Rads (Si) 0.30Ω ID 6.0A 6.0A IRHLF77110 100V, N-CHANNEL TECHNOLOGY T0-39 International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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IRHLF73110 Datasheet
