Download the IRHLNA797064 datasheet PDF.
This datasheet also covers the IRHLNA793064 variant, as both devices belong to the same (irhlna79x064) power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
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5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = -4.5V,TC = 25°C ID @VGS = -4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Sour.
Note: The manufacturer provides a single datasheet file (IRHLNA793064_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHLNA797064 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHLNA797064. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD-97174A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) IR...
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uct Summary Part Number Radiation Level IRHLNA797064 100K Rads (Si) IRHLNA793064 300K Rads (Si) RDS(on) 0.015Ω 0.015Ω ID -56A* -56A* 2N7622U2 IRHLNA797064 60V, P-CHANNEL TECHNOLOGY SMD-2 International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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IRHLNA797064 Datasheet
