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IRHM8130 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHM8150 RADIATION HARDENED POWER MOSFET THRU-HOLE
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Full PDF Text Transcription

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www.datasheet4u.com PD - 90707D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number Radiation Level IRHM7130 100K Rads (Si) IRHM3130 300K Rads (Si) IRHM4130 600K Rads (Si) IRHM8130 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18 Ω ID 14A 14A 14A 14A IRHM7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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