Datasheet4U Logo Datasheet4U.com

IRHM93250 Datasheet RADIATION HARDENED POWER MOSFET THRU-HOLE

Manufacturer: International Rectifier (now Infineon)

📥 Download Datasheet

Overview

www.DataSheet4U.com PD - 91299D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® RDS(on) I D QPL Part Number 0.315Ω -14A JANSR2N7423 0.315Ω -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Ava.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRHM93130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM93150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM9130 RADIATION HARDENED POWER MOSFET
IRHM3054 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3250 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3260 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3Z60 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM4054 RADIATION HARDENED POWER MOSFET THRU-HOLE