n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface M.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.

RADIATION HARDENED POWER MOSFET

IRHNA53160

IRHNA53260

IRHNA53Z60

IRHNA54064

IRHNA54160

IRHNA54260

IRHNA54Z60

IRHNA57064

IRHNA57160

IRHNA57260

IRHNA57Z60

IRHNA58064

IRHNA58160

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