IRHNA9160 transistor equivalent, p-channel transistor.
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Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-R.
such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits i.
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