IRHNA9064 Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHNA9064 BV DSS -60V RDS(on) 0.055Ω ID -48A Features : n n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt - Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Pre-Radiation -48 -30 -192 300 2.4 ± 20 500 -48 30 -5.5 -55 to 150 300 (For 5 sec) 3.3 (typical) Units A W W/K … V m J A m J V/ns o C g To Order Data Sheet 4 U . .. Previous Datasheet Index Next Data Sheet Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source...