This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHNA93260 |
|---|---|
| Datasheet | IRHNA93260 IRHNA9260 Datasheet (PDF) |
| File Size | 265.95 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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MIL-PRF-19500/655 RAD-Hard ™ HEXFET TECHNOLOGY ® QPL Part Number JANSR2N7426U JANSF2N7426U SMD-2 International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNA9064 | P-CHANNEL TRANSISTOR |
| IRHNA9160 | P-CHANNEL TRANSISTOR |
| IRHNA9260 | RADIATION HARDENED POWER MOSFET |
| IRHNA53064 | RADIATION HARDENED POWER MOSFET |
| IRHNA53160 | RADIATION HARDENED POWER MOSFET |
| IRHNA53260 | N-CHANNEL POWER MOSFET |
| IRHNA53Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNA54064 | RADIATION HARDENED POWER MOSFET |
| IRHNA54160 | RADIATION HARDENED POWER MOSFET |
| IRHNA54260 | N-CHANNEL POWER MOSFET |
