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IRHNA93260 - RADIATION HARDENED POWER MOSFET

Download the IRHNA93260 datasheet PDF. This datasheet also covers the IRHNA9260 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Vol.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHNA9260_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNA9064 P-CHANNEL TRANSISTOR
IRHNA9160 P-CHANNEL TRANSISTOR
IRHNA9260 RADIATION HARDENED POWER MOSFET
IRHNA53064 RADIATION HARDENED POWER MOSFET
IRHNA53160 RADIATION HARDENED POWER MOSFET
IRHNA53260 N-CHANNEL POWER MOSFET
IRHNA53Z60 RADIATION HARDENED POWER MOSFET
IRHNA54064 RADIATION HARDENED POWER MOSFET
IRHNA54160 RADIATION HARDENED POWER MOSFET
IRHNA54260 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 93969 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si) RDS(on) 0.154Ω 0.154Ω ID -29A -29A IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard ™ HEXFET TECHNOLOGY ® QPL Part Number JANSR2N7426U JANSF2N7426U SMD-2 International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).