| Part number | IRHNA9160 |
|---|---|
| Datasheet | IRHNA9160_InternationalRectifier.pdf |
| File Size | 233.17 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | P-CHANNEL TRANSISTOR |
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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1433 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA9160 P-CHANNEL HEXFET ® TRANSISTOR RAD HARD -100Volt, 0.087Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 rads (Si). Under identical pre- and...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNA9064 | P-CHANNEL TRANSISTOR |
| IRHNA9260 | RADIATION HARDENED POWER MOSFET |
| IRHNA93260 | RADIATION HARDENED POWER MOSFET |
| IRHNA53064 | RADIATION HARDENED POWER MOSFET |
| IRHNA53160 | RADIATION HARDENED POWER MOSFET |
| IRHNA53260 | N-CHANNEL POWER MOSFET |
| IRHNA53Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNA54064 | RADIATION HARDENED POWER MOSFET |
| IRHNA54160 | RADIATION HARDENED POWER MOSFET |
| IRHNA54260 | N-CHANNEL POWER MOSFET |
