IRHNA9160 Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHNA9160 BV DSS -100V RDS(on) 0.087Ω ID -38A Features : s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25o C I D @ VGS = -12V, TC = 100o C IDM PD @ TC = 25o C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Pre-Radiation -38 -24 -152 300 2.4 ±20 500 -38 30 -5.5 -55 to 150 300 (for 5 sec.) 3.3 (typical) Units A W W/K  V m J A m J V/ns o C g To Order Data Sheet 4 U . .. Previous Datasheet Index Next Data Sheet Pre-Radiation IRHNA9160 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State...