Datasheet Details
| Part number | IRHNJ58230 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 273.16 KB |
| Description | RADIATION HARDENED POWER MOSFET |
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Download the IRHNJ58230 datasheet PDF. This datasheet also includes the IRHNJ53230 variant, as both parts are published together in a single manufacturer document.
| Part number | IRHNJ58230 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 273.16 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Datasheet |
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www.DataSheet4U.com PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si) RDS(on) 0.20Ω 0.20Ω 0.20Ω 0.25Ω ID 13A 13A 13A 13A IRHNJ57230 200V, N-CHANNEL 4 # TECHNOLOGY c SMD-0.5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
| Part Number | Description |
|---|---|
| IRHNJ58034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ58130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ58Z30 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53Z30 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54230 | RADIATION HARDENED POWER MOSFET |